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By Ivan A. Parinov

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Non-stoichiometric SiO2 layer is formed in the samples oxidized at room temperature. Based on the experimental data [77], the most probable atomic configuration of the 6НSiC (11 2 0) surface, oxidized at room temperature, was suggested in Figure 7. The adsorbed oxygen atom (adatom) is located as a bridge between two corner atoms of the Si zigzag chain, an additional oxygen atom is embedded into the back bond of one of the above-mentioned corner adatoms, bonded to the second layer of Si atoms (see Figure 7).

Consequently, the semiconductor regions with different Development and Study of Silicon Dioxide Nanostructured Films … 21 thickness of dielectric films are annealed differently. This effect will be particularly noticeable in case of small spans of radiation. These features of SiO2 films absorption and transmission must be considered in case of choosing the optimal treatment regimes of semiconductor structures used in the integrated circuits and micro-systems [14  17]. During the stimulated by radiation thermal annealing of semiconductor structures, depended on the radiation source type, we use a wavelength range from vacuum ultraviolet up to the far infrared radiation.

Experimental studies showed that the leak pockets are quite big, especially in the oxides, grown on p-type substrates. In Reference [60], MOS capacitors, intended to study volt-farad characteristics, were made using homo-epitaxial layers grown on (0001) Si-face of silicon carbonate plates of 4Нand 6Н-SiC polytypes. Boron-doped epitaxial layers of p-type and aluminum-doped epitaxial layers of n-type were grown on strongly doped substrates of p- and n-type, respectively. The thickness of epitaxial layer is 4 µm.

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